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BCX6916E6327HTSA1

BCX6916E6327HTSA1

BCX6916E6327HTSA1

Infineon Technologies

BCX6916E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCX6916E6327HTSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2011
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCX69
Power - Max 3W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 100MHz
RoHS StatusRoHS Compliant
In-Stock:1915 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.269181$0.269181
10$0.253945$2.53945
100$0.239570$23.957
500$0.226010$113.005
1000$0.213217$213.217

BCX6916E6327HTSA1 Product Details

BCX6916E6327HTSA1 Overview


This device has a DC current gain of 100 @ 500mA 1V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The device has a 20V maximal voltage - Collector Emitter Breakdown.

BCX6916E6327HTSA1 Features


the DC current gain for this device is 100 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A

BCX6916E6327HTSA1 Applications


There are a lot of Infineon Technologies BCX6916E6327HTSA1 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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