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BD745C-S

BD745C-S

BD745C-S

Bourns Inc.

BD745C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD745C-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Supplier Device Package SOT-93
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -65°C
Max Power Dissipation3.5W
Base Part Number BD745
Polarity NPN
Power - Max 3.5W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 20A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A 4V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 3V @ 5A, 20A
Collector Emitter Breakdown Voltage110V
Voltage - Collector Emitter Breakdown (Max) 110V
Current - Collector (Ic) (Max) 20A
RoHS StatusROHS3 Compliant
In-Stock:2702 items

BD745C-S Product Details

BD745C-S Overview


DC current gain in this device equals 20 @ 5A 4V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Product comes in the supplier's device package SOT-93.Collector Emitter Breakdown occurs at 110VV - Maximum voltage.When collector current reaches its maximum, it can reach 20A volts.

BD745C-S Features


the DC current gain for this device is 20 @ 5A 4V
the vce saturation(Max) is 3V @ 5A, 20A
the supplier device package of SOT-93

BD745C-S Applications


There are a lot of Bourns Inc. BD745C-S applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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