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SQJQ910EL-T1_GE3

SQJQ910EL-T1_GE3

SQJQ910EL-T1_GE3

Vishay Siliconix

SQJQ910EL-T1_GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available on our website

SOT-23

SQJQ910EL-T1_GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® 8 x 8 Dual
Number of Pins 4
Supplier Device Package PowerPAK® 8 x 8 Dual
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2018
Series Automotive, AEC-Q101, TrenchFET®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 187W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2832pF @ 50V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Drain to Source Voltage (Vdss) 100V
FET Feature Standard
RoHS StatusROHS3 Compliant
In-Stock:2509 items

Pricing & Ordering

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SQJQ910EL-T1_GE3 Product Details

SQJQ910EL-T1_GE3 Description


The SQJQ910EL-T1_GE3 is an Automotive Dual N-Channel 100 V (D-S) 175 °C MOSFET.



SQJQ910EL-T1_GE3 Features


  • TrenchFET® power MOSFET

  • AEC-Q101 qualified

  • 100 % Rg and UIS tested

  • Fully lead (Pb)-free device



SQJQ910EL-T1_GE3 Applications


  • Industrial


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