SQJ974EP-T1_GE3 Description
The SQJ974EP-T1_GE3 is an Automotive Dual N-Channel 100 V (D-S) 175 °C MOSFET. The metal-oxide-semiconductor field-effect transistor is referred to as MOSFET. It has a MOS construction and is a field-effect transistor. The MOSFET typically has three terminals: the gate (G), drain (D), and source (S).
SQJ974EP-T1_GE3 Features
100 % Rg and UIS tested
TrenchFET® power MOSFET
AEC-Q101 qualified
High current: The same tendency as for low ON resistance.
High Speed: U-MOS is disadvantageous for high-speed switching because of large gate capacity (Ciss).
Withstand voltage: The optimum structure is selected for the target withstand voltage.
Low On-Resistance: U-MOS for products with 250 V or less, SJ-MOS (or DTMOS) are advantageous for products with more than that.
SQJ974EP-T1_GE3 Applications
