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SQJ431EP-T1_GE3

SQJ431EP-T1_GE3

SQJ431EP-T1_GE3

Vishay Siliconix

MOSFET P-CHAN 200V SO8L

SOT-23

SQJ431EP-T1_GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Supplier Device Package PowerPAK® SO-8
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101, TrenchFET®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 83W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 213mOhm @ 1A, 4V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4355pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Drain to Source Resistance 178mOhm
RoHS StatusROHS3 Compliant
In-Stock:4090 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$13.211968$13.211968
10$12.464121$124.64121
100$11.758605$1175.8605
500$11.093023$5546.5115
1000$10.465116$10465.116

About SQJ431EP-T1_GE3

The SQJ431EP-T1_GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CHAN 200V SO8L.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SQJ431EP-T1_GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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