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SIR168DP-T1-GE3

SIR168DP-T1-GE3

SIR168DP-T1-GE3

Vishay Siliconix

MOSFET 30V 40A 34.7W 4.4mohm @ 10V

SOT-23

SIR168DP-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2017
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count8
JESD-30 Code R-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5W Ta 34.7W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2040pF @ 15V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Rise Time70ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 40A
Threshold Voltage 2.4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0044Ohm
Drain to Source Breakdown Voltage 30V
Nominal Vgs 2.4 V
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
In-Stock:1174 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.800604$1.800604
10$1.698683$16.98683
100$1.602531$160.2531
500$1.511822$755.911
1000$1.426247$1426.247

About SIR168DP-T1-GE3

The SIR168DP-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 30V 40A 34.7W 4.4mohm @ 10V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIR168DP-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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