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SIDR390DP-T1-RE3

SIDR390DP-T1-RE3

SIDR390DP-T1-RE3

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

SOT-23

SIDR390DP-T1-RE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Supplier Device Package PowerPAK® SO-8DC
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series TrenchFET® Gen IV
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 6.25W Ta 125W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 0.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10180pF @ 15V
Current - Continuous Drain (Id) @ 25°C 69.9A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
RoHS StatusROHS3 Compliant
In-Stock:2595 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.541801$2.541801
10$2.397925$23.97925
100$2.262194$226.2194
500$2.134145$1067.0725
1000$2.013345$2013.345

About SIDR390DP-T1-RE3

The SIDR390DP-T1-RE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features N-Channel 30 V (D-S) MOSFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIDR390DP-T1-RE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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