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SIB900EDK-T1-GE3

SIB900EDK-T1-GE3

SIB900EDK-T1-GE3

Vishay Siliconix

SIB900EDK-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available on our website

SOT-23

SIB900EDK-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-75-6L Dual
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2016
Series TrenchFET®
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional FeatureESD PROTECTION
Subcategory FET General Purpose Powers
Max Power Dissipation3.1W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number SIB900
Pin Count6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time20 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 225m Ω @ 1.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 4.5V
Rise Time12ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 6V
Drain-source On Resistance-Max 0.225Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4691 items

Pricing & Ordering

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SIB900EDK-T1-GE3 Product Details

SIB900EDK-T1-GE3 Description


Based on Vishay's understanding of the common requirements that are frequently placed on Vishay products in generic applications, statements regarding the suitability of products for specific types of applications are made. Any claims about a product's suitability for a certain use are not guarantees. The client is in charge of confirming that a specific product with the characteristics listed in the product specification is appropriate for use in a given application. Datasheet and/or specification parameters may change in different applications, and performance may change over time. The technical experts of the customer must validate each application's operational settings, including typical parameters.



SIB900EDK-T1-GE3 Features


TrenchFET® Power MOSFET

New Thermally Enhanced PowerPAK®

SC-75 Package

Small Footprint Area

Low On-Resistance

Thin 0.75 mm Profile

Typical ESD Protection 2800 V

Rated ESD Protection 1400 V

Compliant to RoHS Directive 2002/95/EC



SIB900EDK-T1-GE3 Applications


Load Switch for Portable Devices

Low Voltage Load Switch


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