Name: SIA430DJ-T4-GE3
Brand: Vishay Siliconix
SKU: SIA430DJ-T4-GE3
Availability: InStock

new-10%

SIA430DJ-T4-GE3

Manufacturer part number:SIA430DJ-T4-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 13.5mOhm @ 7A, 10V ±20V 800pF @ 10V 18nC @ 10V 20V PowerPAK® SC-70-6

Case Package:SOT-23

Datasheet:SIA430DJ-T4-GE3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6
Supplier Device Package	PowerPAK® SC-70-6 Single
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	3.5W Ta 19.2W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	13.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 10V
Current - Continuous Drain (Id) @ 25°C	12A Ta 12A Tc
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

SIA430DJ-T4-GE3 Product Details

SIA430DJ-T4-GE3 Overview

The maximum input capacitance of this device is 800pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.