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SI7980DP-T1-GE3

SI7980DP-T1-GE3

SI7980DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 8A PPAK SO-8

SOT-23

SI7980DP-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Powers
Max Power Dissipation21.9W
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number SI7980
Pin Count8
JESD-30 Code R-XDSO-C6
Number of Elements 2
Number of Channels 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation3.4W
Case Connection DRAIN
Turn On Delay Time18 ns
Power - Max 19.8W 21.9W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time18ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 30A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Height 1.04mm
Length 4.9mm
Width 5.89mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:8006 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.559040$3.55904
10$3.357585$33.57585
100$3.167533$316.7533
500$2.988239$1494.1195
1000$2.819093$2819.093

About SI7980DP-T1-GE3

The SI7980DP-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 2N-CH 20V 8A PPAK SO-8.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI7980DP-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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