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SI7461DP-T1-E3

  • SI7461DP-T1-E3 - SI7461DP-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website
  • SI7461DP-T1-E3 - SI7461DP-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website

SI7461DP-T1-E3

SI7461DP-T1-E3

Vishay Siliconix

SI7461DP-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website

SOT-23

SI7461DP-T1-E3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Manufacturer Package Identifier S17-0173-Single
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 14.5mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation1.9W
Case Connection DRAIN
Turn On Delay Time20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.5m Ω @ 14.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.6A Ta
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time20ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 205 ns
Continuous Drain Current (ID) -12.6A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 60A
Max Junction Temperature (Tj) 150°C
Nominal Vgs -3 V
Height 1.17mm
Length 4.9mm
Width 5.89mm
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3600 items

Pricing & Ordering

QuantityUnit PriceExt. Price

SI7461DP-T1-E3 Product Details

SI7461DP-T1-E3 Description


The SI7461DP-T1-E3 is a P-Channel 60 V (D-S) MOSFET.



SI7461DP-T1-E3 Features


  • TrenchFET® power MOSFETs

  • Low thermal resistance PowerPAK® package with low 1.07 mm profile



SI7461DP-T1-E3 Applications


  • Industrial


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