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SI4850EY-T1-E3

SI4850EY-T1-E3

SI4850EY-T1-E3

Vishay Siliconix

Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R

SOT-23

SI4850EY-T1-E3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2016
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 22mOhm
Subcategory FET General Purpose Powers
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count8
Number of Elements 1
Number of Channels 1
Voltage 60V
Power Dissipation-Max 1.7W Ta
Element ConfigurationSingle
Current 6A
Operating ModeENHANCEMENT MODE
Power Dissipation1.7W
Turn On Delay Time10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time10ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 8.5A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 175°C
Nominal Vgs 1 V
Height 1.75mm
Length 5mm
Width 4mm
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4534 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.091040$5.09104
10$4.802868$48.02868
100$4.531007$453.1007
500$4.274535$2137.2675
1000$4.032581$4032.581

About SI4850EY-T1-E3

The SI4850EY-T1-E3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI4850EY-T1-E3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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