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SI4486EY-T1-GE3

SI4486EY-T1-GE3

SI4486EY-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 5.4A 8-SOIC

SOT-23

SI4486EY-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2008
Series TrenchFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.8W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 5.4A Ta
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:4855 items

About SI4486EY-T1-GE3

The SI4486EY-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 5.4A 8-SOIC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI4486EY-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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