Name: SI4102DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4102DY-T1-GE3
Availability: InStock

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SI4102DY-T1-GE3

Manufacturer part number:SI4102DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:Single N-Channel 100 V 2.4 W 3.8 A 0.158 O Surface Mount Power Mosfet - SOIC-8

Case Package:SOT-23

Datasheet:SI4102DY-T1-GE3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.4W Ta 4.8W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4.8W
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	158m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 50V
Current - Continuous Drain (Id) @ 25°C	3.8A Tc
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	2.7A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.0027A
Drain to Source Breakdown Voltage	100V
Height	1.55mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About SI4102DY-T1-GE3

The SI4102DY-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features Single N-Channel 100 V 2.4 W 3.8 A 0.158 O Surface Mount Power Mosfet - SOIC-8.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI4102DY-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.