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SI1029X-T1-GE3

SI1029X-T1-GE3

SI1029X-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 60V SC89-6

SOT-23

SI1029X-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Weight 32.006612mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 4Ohm
Terminal Finish Matte Tin (Sn)
Additional FeatureLOW THRESHOLD
Subcategory Other Transistors
Max Power Dissipation250mW
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number SI1029
Pin Count6
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation250mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V
Current - Continuous Drain (Id) @ 25°C 305mA 190mA
Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 305mA
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.305A
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 600μm
Length 1.7mm
Width 1.2mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:11483 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.496732$0.496732
10$0.468615$4.68615
100$0.442089$44.2089
500$0.417066$208.533
1000$0.393458$393.458

About SI1029X-T1-GE3

The SI1029X-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N/P-CH 60V SC89-6.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI1029X-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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