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IRFPC60LCPBF
Vishay Siliconix
MOSFET (Metal Oxide) N-Channel Tube 400mOhm @ 9.6A, 10V ±30V 3500pF @ 25V 120nC @ 10V 600V TO-247-3
SOT-23
IRFPC60LCPBF Datasheet PDF
non-compliant
| Parameter Name | Value |
|---|---|
| Type | Parameter |
| Factory Lead Time | 8 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Supplier Device Package | TO-247-3 |
| Weight | 38.000013g |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2011 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 400mOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 280W Tc |
| Element Configuration | Single |
| Power Dissipation | 280W |
| Turn On Delay Time | 17 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 9.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 16A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Rise Time | 57ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 38 ns |
| Turn-Off Delay Time | 43 ns |
| Continuous Drain Current (ID) | 16A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Input Capacitance | 3.5nF |
| Drain to Source Resistance | 400mOhm |
| Rds On Max | 400 mΩ |
| Nominal Vgs | 4 V |
| Height | 20.7mm |
| Length | 15.87mm |
| Width | 5.31mm |
| REACH SVHC | Unknown |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Quantity | Unit Price | Ext. Price |
| 1 | $6.94000 | $6.94 |
| 25 | $5.61640 | $140.41 |
| 100 | $5.13650 | $513.65 |
| 500 | $4.20080 | $2100.4 |
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