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IRFI614GPBF

IRFI614GPBF

IRFI614GPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 2Ohm @ 1.3A, 10V ±20V 140pF @ 25V 8.2nC @ 10V 250V TO-220-3 Full Pack, Isolated Tab

SOT-23

IRFI614GPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Number of Pins 3
Supplier Device Package TO-220-3
Weight 6.000006g
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2016
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 2kOhm
Max Operating Temperature150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 23W Tc
Element ConfigurationSingle
Turn On Delay Time7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.1A Tc
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Rise Time7.6ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 2.1A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 250V
Input Capacitance140pF
Drain to Source Resistance 2Ohm
Rds On Max 2 Ω
Nominal Vgs 4 V
Height 9.8mm
Length 10.63mm
Width 4.83mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:5307 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.71000$1.71
10$1.54000$15.4
100$1.23750$123.75
500$0.96250$481.25

IRFI614GPBF Product Details

IRFI614GPBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 140pF @ 25V.This device conducts a continuous drain current (ID) of 2.1A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 16 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 2Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFI614GPBF Features


a continuous drain current (ID) of 2.1A
the turn-off delay time is 16 ns
single MOSFETs transistor is 2Ohm
a threshold voltage of 4V
a 250V drain to source voltage (Vdss)


IRFI614GPBF Applications


There are a lot of Vishay Siliconix
IRFI614GPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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