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IRF640L

IRF640L

IRF640L

Vishay Siliconix

MOSFET N-CH 200V 18A TO-262

SOT-23

IRF640L Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Supplier Device Package I2PAK
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2016
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.1W Ta 130W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 18A
Input Capacitance1.3nF
Rds On Max 180 mΩ
RoHS StatusNon-RoHS Compliant
In-Stock:4012 items

About IRF640L

The IRF640L from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 200V 18A TO-262.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF640L, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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