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IRC630PBF

IRC630PBF

IRC630PBF

Vishay Siliconix

Trans MOSFET N-CH 200V 9A 5-Pin(5+Tab) TO-220

SOT-23

IRC630PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-5
Number of Pins 5
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2005
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 74W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 9A
FET Feature Current Sensing
RoHS StatusROHS3 Compliant
In-Stock:1260 items

About IRC630PBF

The IRC630PBF from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 200V 9A 5-Pin(5+Tab) TO-220.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRC630PBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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