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VS-GB75SA120UP

VS-GB75SA120UP

VS-GB75SA120UP

Vishay Semiconductor Diodes Division

VISHAY VS-GB75SA120UP IGBT Array & Module Transistor, NPN, 131 A, 3.3 V, 658 W, 1.2 kV, SOT-227

SOT-23

VS-GB75SA120UP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Operating Temperature-40°C~150°C TJ
Published 2012
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation658W
Polarity NPN
Configuration Single
Power - Max 658W
Input Standard
Collector Emitter Voltage (VCEO) 3.8V
Max Collector Current 250μA
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage3.3V
Vce(on) (Max) @ Vge, Ic 3.8V @ 15V, 75A
IGBT Type NPT
NTC ThermistorNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
In-Stock:4712 items

About VS-GB75SA120UP

The VS-GB75SA120UP from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features VISHAY VS-GB75SA120UP IGBT Array & Module Transistor, NPN, 131 A, 3.3 V, 658 W, 1.2 kV, SOT-227.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the VS-GB75SA120UP, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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