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VS-GB50YF120N

VS-GB50YF120N

VS-GB50YF120N

Vishay Semiconductor Diodes Division

Trans IGBT Module N-CH 1.2KV 66A 35-Pin ECONO2 4PAK

SOT-23

VS-GB50YF120N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 35
Weight 170.097139g
Operating Temperature150°C TJ
Published 2012
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation330W
Polarity NPN
Power - Max 330W
Input Standard
Collector Emitter Voltage (VCEO) 4.5V
Max Collector Current 66A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage4.15V
Vce(on) (Max) @ Vge, Ic 4.5V @ 15V, 75A
NTC ThermistorNo
Height 13.2mm
Length 107.8mm
Width 45.4mm
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
In-Stock:1328 items

Pricing & Ordering

QuantityUnit PriceExt. Price
12$152.27417$1827.29004

About VS-GB50YF120N

The VS-GB50YF120N from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans IGBT Module N-CH 1.2KV 66A 35-Pin ECONO2 4PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the VS-GB50YF120N, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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