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VS-GA100NA60UP

VS-GA100NA60UP

VS-GA100NA60UP

Vishay Semiconductor Diodes Division

IGBT MOD 600V 100A 250W SOT227

SOT-23

VS-GA100NA60UP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
Published 2013
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional FeatureUL RECOGNIZED
Terminal Position UPPER
Terminal FormUNSPECIFIED
Pin Count4
JESD-30 Code R-PUFM-X4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 250μA
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 100A
Turn On Time137 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Turn Off Time-Nom (toff) 550 ns
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 7.4nF @ 30V
RoHS StatusROHS3 Compliant
In-Stock:2498 items

About VS-GA100NA60UP

The VS-GA100NA60UP from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT MOD 600V 100A 250W SOT227.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the VS-GA100NA60UP, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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