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VS-ETF075Y60U

VS-ETF075Y60U

VS-ETF075Y60U

Vishay Semiconductor Diodes Division

IGBT 600V 109A 294W EMIPAK-2B

SOT-23

VS-ETF075Y60U Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 37 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case EMIPAK-2B
Operating Temperature175°C TJ
Published 2016
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation294W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Three Level Inverter
Power - Max 294W
Input Standard
Collector Emitter Voltage (VCEO) 1.93V
Max Collector Current 109A
Current - Collector Cutoff (Max) 100μA
Collector Emitter Breakdown Voltage600V
Input Capacitance4.44nF
Vce(on) (Max) @ Vge, Ic 1.93V @ 15V, 75A
IGBT Type Trench
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 4.44nF @ 30V
RoHS StatusROHS3 Compliant
In-Stock:115 items

Pricing & Ordering

QuantityUnit PriceExt. Price
60$88.55200$5313.12

About VS-ETF075Y60U

The VS-ETF075Y60U from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT 600V 109A 294W EMIPAK-2B.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the VS-ETF075Y60U, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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