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VS-8TQ060-M3

VS-8TQ060-M3

VS-8TQ060-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 60V 8A TO220AC

SOT-23

VS-8TQ060-M3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 550μA @ 60V
Voltage - Forward (Vf) (Max) @ If 880mV @ 16A
Operating Temperature - Junction -55°C~175°C
Voltage - DC Reverse (Vr) (Max) 60V
Current - Average Rectified (Io) 8A
Capacitance @ Vr, F 500pF @ 5V 1MHz
RoHS StatusROHS3 Compliant
In-Stock:6245 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.046000$1.046
10$0.986792$9.86792
100$0.930936$93.0936
500$0.878242$439.121
1000$0.828530$828.53

About VS-8TQ060-M3

The VS-8TQ060-M3 from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 60V 8A TO220AC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the VS-8TQ060-M3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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