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VS-30ETU12-M3

VS-30ETU12-M3

VS-30ETU12-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 30A TO220AC

SOT-23

VS-30ETU12-M3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Series FRED Pt®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 145μA @ 1.2kV
Voltage - Forward (Vf) (Max) @ If 2.68V @ 30A
Operating Temperature - Junction -55°C~175°C
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 30A
Reverse Recovery Time 220ns
RoHS StatusROHS3 Compliant
In-Stock:3176 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.756959$1.756959
10$1.657509$16.57509
100$1.563688$156.3688
500$1.475177$737.5885
1000$1.391676$1391.676

About VS-30ETU12-M3

The VS-30ETU12-M3 from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 30A TO220AC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the VS-30ETU12-M3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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