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VS-2EGH02-M3/5BT

VS-2EGH02-M3/5BT

VS-2EGH02-M3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 2A DO214AA

SOT-23

VS-2EGH02-M3/5BT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Supplier Device Package DO-214AA (SMBJ)
PackagingTape & Reel (TR)
Series FRED Pt®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 2μA @ 200V
Voltage - Forward (Vf) (Max) @ If 900mV @ 2A
Operating Temperature - Junction -55°C~175°C
Voltage - DC Reverse (Vr) (Max) 200V
Current - Average Rectified (Io) 2A
Reverse Recovery Time 23ns
RoHS StatusROHS3 Compliant
In-Stock:52077 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About VS-2EGH02-M3/5BT

The VS-2EGH02-M3/5BT from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 150V 2A DO214AA.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the VS-2EGH02-M3/5BT, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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