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VLZ10B-GS18

VLZ10B-GS18

VLZ10B-GS18

Vishay Semiconductor Diodes Division

ZENER DIODE 8Ohm 9.66V 40μA @ 8.94V -65°C~175°C 500mW 2 Terminations SOD-80 Variant

SOT-23

VLZ10B-GS18 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-80 Variant
Number of Pins 2
Diode Element Material SILICON
Operating Temperature-65°C~175°C
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Published 2014
JESD-609 Code e2
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Silver (Sn/Ag)
Additional FeatureHIGH RELIABILITY
HTS Code8541.10.00.50
Max Power Dissipation500mW
Terminal Position END
Terminal FormWRAP AROUND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance8Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 40μA @ 8.94V
Voltage - Forward (Vf) (Max) @ If 1.5V @ 200mA
Case Connection ISOLATED
Max Reverse Leakage Current 40nA
Impedance-Max 8Ohm
Reference Voltage9.66V
Zener Voltage 9.66V
Voltage Tol-Max 3%
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:3311 items

VLZ10B-GS18 Product Details

VLZ10B-GS18 Overview


A reverse leakage current of 40μA @ 8.94V is required to supply this electrical device.Voltage (Tol) is limited to 3%.40nA is the maximum reverse leakage current.1.5V @ 200mA is reached when the maximum voltage - Forward (Vf) is supplied for its operation.

VLZ10B-GS18 Features


reverse leakage current of 40μA @ 8.94V
40μA @ 8.94V is the maximum voltage (Tol)
Reverse leakage current reaches 40nA


VLZ10B-GS18 Applications


There are a lot of Vishay Semiconductor Diodes Division
VLZ10B-GS18 applications of zener single diodes.


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