Name: VI40150C-E3/4W
Brand: Vishay Semiconductor Diodes Division
SKU: VI40150C-E3/4W
Price: 1.45000 USD
Availability: InStock

new-10%

VI40150C-E3/4W

Manufacturer part number:VI40150C-E3/4W

Manufacturer:Vishay Semiconductor Diodes Division

Description:VI40150C-E3/4W datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website

Case Package:SOT-23

Datasheet:VI40150C-E3/4W Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Diode Element Material	SILICON
Packaging	Tube
Published	2011
Series	TMBS®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	FREE WHEELING DIODE, LOW POWER LOSS
HTS Code	8541.10.00.80
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT APPLICABLE
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT APPLICABLE
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	2
Element Configuration	Common Cathode
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Schottky
Current - Reverse Leakage @ Vr	250μA @ 150V
Voltage - Forward (Vf) (Max) @ If	1.43V @ 20A
Forward Current	40A
Max Reverse Leakage Current	250μA
Operating Temperature - Junction	-55°C~150°C
Max Surge Current	160A
Application	EFFICIENCY
Max Reverse Voltage (DC)	150V
Average Rectified Current	20A
Number of Phases	1
Peak Reverse Current	250μA
Max Repetitive Reverse Voltage (Vrrm)	150V
Peak Non-Repetitive Surge Current	160A
Diode Configuration	1 Pair Common Cathode
RoHS Status	ROHS3 Compliant

VI40150C-E3/4W Product Details

VI40150C-E3/4W Overview

Monarrayoring the surge current and preventing array from exceeding 160A should be the rule.When the forward voltage is set to 40A, this device will operate.Powered by reverse voltage, this device has a peak voltage of 250μA.As a reverse biased semiconductor device, its maximal reverse leakage current is 250μA.