Name: VI20200G-E3/4W
Brand: Vishay Semiconductor Diodes Division
SKU: VI20200G-E3/4W
Price: 0.86000 USD
Availability: InStock

new-10%

VI20200G-E3/4W

Manufacturer part number:VI20200G-E3/4W

Manufacturer:Vishay Semiconductor Diodes Division

Description:VI20200G-E3/4W datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website

Case Package:SOT-23

Datasheet:VI20200G-E3/4W Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Diode Element Material	SILICON
Packaging	Tube
Published	2011
Series	TMBS®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Additional Feature	FREE WHEELING DIODE, LOW POWER LOSS
HTS Code	8541.10.00.80
Subcategory	Rectifier Diodes
Terminal Position	SINGLE
Pin Count	3
Number of Elements	2
Element Configuration	Common Cathode
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Schottky
Current - Reverse Leakage @ Vr	150μA @ 200V
Voltage - Forward (Vf) (Max) @ If	1.7V @ 10A
Forward Current	20A
Max Reverse Leakage Current	150μA
Operating Temperature - Junction	-40°C~150°C
Max Surge Current	110A
Application	EFFICIENCY
Forward Voltage	1.7V
Max Reverse Voltage (DC)	200V
Average Rectified Current	10A
Number of Phases	1
Peak Reverse Current	150μA
Max Repetitive Reverse Voltage (Vrrm)	200V
Peak Non-Repetitive Surge Current	110A
Diode Configuration	1 Pair Common Cathode
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

VI20200G-E3/4W Product Details

VI20200G-E3/4W Overview

The device operates when the forward voltage is set to 1.7V.Surge currents should be monitored and prevented from exceeding 110A.As long as the forward voltage is set to 20A, the device will operate.A reverse voltage peak of 150μA is used to power devices like this one.Its maximal reverse leakage current is 150μA, which is the current from that semiconductor device when the device is reverse biased.