VBT2080C-E3/4W Description
VBT2080C-E3/4W Dual Trench MOS Barrier Schottky Rectifier. The Schottky diode, also known as the Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.
VBT2080C-E3/4W Features
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High-efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106
VBT2080C-E3/4W Applications
High-frequency converters
Switching power supplies
Freewheeling diodes
OR-ing diode
DC/DC converters
Reverse battery protection
