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VB20120C-E3/4W

VB20120C-E3/4W

VB20120C-E3/4W

Vishay Semiconductor Diodes Division

VB20120C-E3/4W datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website

SOT-23

VB20120C-E3/4W Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Diode Element Material SILICON
PackagingTube
Published 2011
Series TMBS®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature150°C
Min Operating Temperature -40°C
Additional FeatureFREE WHEELING DIODE, LOW POWER LOSS
HTS Code8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 2
Element ConfigurationCommon Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 700μA @ 120V
Voltage - Forward (Vf) (Max) @ If 900mV @ 10A
Forward Current20A
Max Reverse Leakage Current 700μA
Operating Temperature - Junction -40°C~150°C
Max Surge Current120A
Application EFFICIENCY
Forward Voltage900mV
Max Reverse Voltage (DC) 120V
Average Rectified Current10A
Number of Phases 1
Peak Reverse Current700μA
Max Repetitive Reverse Voltage (Vrrm) 120V
Peak Non-Repetitive Surge Current 120A
Diode Configuration 1 Pair Common Cathode
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:7190 items

Pricing & Ordering

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VB20120C-E3/4W Product Details

VB20120C-E3/4W Overview


As long as the forward voltage is set to 900mV, the device will operate.Maintaining a surge current under 120A and not letting it exceed it is the key to preventing it.There will be no operation of this device when the forward voltage is set to 20A.A reverse voltage peak of 700μA is applied to devices like this one.A semiconductor device's maximum reverse leakage current is 700μA, which is the current created by its reverse bias.

VB20120C-E3/4W Features


900mV forward voltage
a peak voltage of 700μA
a reverse voltage peak of 700μA

VB20120C-E3/4W Applications


There are a lot of Vishay Semiconductor Diodes Division VB20120C-E3/4W applications of rectifier diode array.

  • Battery chargers
  • Rectifiers for UBS
  • Rectifier for drives applications
  • Rectifiers in switch mode power supplies (SMPS)
  • Crowbar applications
  • General Rectification
  • Free wheeling diode in low voltage converters

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