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V20120C-E3/4W

V20120C-E3/4W

V20120C-E3/4W

Vishay Semiconductor Diodes Division

V20120C-E3/4W datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website

SOT-23

V20120C-E3/4W Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 27 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 2
Diode Element Material SILICON
PackagingTube
Published 2011
Series TMBS®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature150°C
Min Operating Temperature -40°C
Additional FeatureFREE WHEELING DIODE, LOW POWER LOSS
HTS Code8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 2
Element ConfigurationCommon Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 700μA @ 120V
Voltage - Forward (Vf) (Max) @ If 900mV @ 10A
Forward Current20A
Max Reverse Leakage Current 150μA
Operating Temperature - Junction -40°C~150°C
Max Surge Current110A
Application EFFICIENCY
Forward Voltage900mV
Max Reverse Voltage (DC) 120V
Average Rectified Current10A
Number of Phases 1
Reverse Recovery Time 20 ns
Peak Reverse Current700μA
Max Repetitive Reverse Voltage (Vrrm) 120V
Peak Non-Repetitive Surge Current 120A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 175A
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
In-Stock:4307 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.271000$1.271
10$1.199057$11.99057
100$1.131185$113.1185
500$1.067156$533.578
1000$1.006751$1006.751

V20120C-E3/4W Product Details

V20120C-E3/4W Overview


When the forward voltage is set to 900mV, this device will operate.Array should be a rule to monArrayor the surge current and not allow Array to exceed 110A.In operation, this device will be set to 20A volts forward.The reverse voltage peak of this device is 700μA.As a reverse biased semiconductor device, its maximal reverse leakage current is 150μA.

V20120C-E3/4W Features


900mV forward voltage
a peak voltage of 700μA
a reverse voltage peak of 700μA

V20120C-E3/4W Applications


There are a lot of Vishay Semiconductor Diodes Division V20120C-E3/4W applications of rectifier diode array.

  • Rectifier for drives applications
  • General Rectification
  • Rectifiers in switch mode power supplies (SMPS)
  • Crowbar applications
  • Free wheeling diode in low voltage converters
  • Rectifiers for UBS
  • Battery chargers

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