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V1PM12-M3/H

V1PM12-M3/H

V1PM12-M3/H

Vishay Semiconductor Diodes Division

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

SOT-23

V1PM12-M3/H Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case DO-219AD
Supplier Device Package MicroSMP (DO-219AD)
PackagingTape & Reel (TR)
Published 2018
Series eSMP®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 50μA @ 120V
Voltage - Forward (Vf) (Max) @ If 870mV @ 1A
Operating Temperature - Junction -40°C~175°C
Voltage - DC Reverse (Vr) (Max) 120V
Current - Average Rectified (Io) 1A
Capacitance @ Vr, F 100pF @ 4V 1MHz
RoHS StatusROHS3 Compliant
In-Stock:22419 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.306000$0.306
10$0.288679$2.88679
100$0.272339$27.2339
500$0.256924$128.462
1000$0.242381$242.381

About V1PM12-M3/H

The V1PM12-M3/H from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the V1PM12-M3/H, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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