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SE20PAJHM3/I

SE20PAJHM3/I

SE20PAJHM3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.6A DO220AA

SOT-23

SE20PAJHM3/I Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case DO-220AA
Supplier Device Package DO-220AA (SMP)
PackagingTape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101, eSMP®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.05V @ 2A
Operating Temperature - Junction -55°C~175°C
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 1.6A
Reverse Recovery Time 1.2μs
Capacitance @ Vr, F 13pF @ 4V 1MHz
RoHS StatusROHS3 Compliant
In-Stock:72558 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.370000$0.37
10$0.349057$3.49057
100$0.329299$32.9299
500$0.310659$155.3295
1000$0.293075$293.075

About SE20PAJHM3/I

The SE20PAJHM3/I from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 600V 1.6A DO220AA.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SE20PAJHM3/I, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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