S1MHE3_A/I

Name: S1MHE3_A/I
Brand: Vishay Semiconductor Diodes Division
SKU: S1MHE3_A/I
Price: 0.45000 USD
Availability: InStock

new-10%

S1MHE3_A/I

Manufacturer part number:S1MHE3_A/I

Manufacturer:Vishay Semiconductor Diodes Division

Description:S1MHE3_A/I datasheet pdf and Diodes - Rectifiers - Single product details from Vishay Semiconductor Diodes Division stock available on our website

Case Package:SOT-23

Datasheet:S1MHE3_A/I Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Number of Pins	2
Diode Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2014
Series	Automotive, AEC-Q100
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	FREE WHEELING DIODE
HTS Code	8541.10.00.80
Subcategory	Rectifier Diodes
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	S1M
Reference Standard	AEC-Q101
Number of Elements	1
Element Configuration	Single
Speed	Standard Recovery >500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	5μA @ 1000V
Voltage - Forward (Vf) (Max) @ If	1.1V @ 1A
Operating Temperature - Junction	-55°C~150°C
Output Current-Max	1A
Voltage - DC Reverse (Vr) (Max)	1000V
Forward Voltage	1.1V
Max Reverse Voltage (DC)	1kV
Average Rectified Current	1A
Reverse Recovery Time	1.8 μs
Max Repetitive Reverse Voltage (Vrrm)	1kV
Capacitance @ Vr, F	12pF @ 4V 1MHz
Peak Non-Repetitive Surge Current	30A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant