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PLZ2V4B-G3/H

PLZ2V4B-G3/H

PLZ2V4B-G3/H

Vishay Semiconductor Diodes Division

ZENER DIODE 100Ohm ±3.95% 120μA @ 1V 150°C TJ 2 Terminations DO-219AC

SOT-23

PLZ2V4B-G3/H Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Mounting Type Surface Mount
Package / Case DO-219AC
Surface MountYES
Diode Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101, PLZ
Published 2016
Tolerance ±3.95%
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Reference Standard IEC-61000-4-2, 4-5
JESD-30 Code R-PDSO-F2
Number of Elements 1
Polarity UNIDIRECTIONAL
Configuration SINGLE
Power Dissipation-Max 0.96W
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 120μA @ 1V
Voltage - Forward (Vf) (Max) @ If 900mV @ 10mA
Power - Max 960mW
Impedance-Max 100Ohm
Reference Voltage2.4V
Voltage - Zener (Nom) (Vz) 2.53V
Working Test Current 20mA
RoHS StatusROHS3 Compliant
In-Stock:20066 items

Pricing & Ordering

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PLZ2V4B-G3/H Product Details

PLZ2V4B-G3/H Overview


An electrical device like this requires a reverse leakage current of 120μA @ 1V.While the device is operating, the maximum voltage - Zener (Nom) is reduced to 2.53V.This device must be operated with the working test voltage set to 20mA.For operation, diode reaches 900mV @ 10mA at the maximum voltage - Forward (Vf).

PLZ2V4B-G3/H Features


reverse leakage current of 120μA @ 1V
120μA @ 1V is the maximum voltage (Tol)
the working test voltage to 20mA
minimal dynamic impedance is 20mA


PLZ2V4B-G3/H Applications


There are a lot of Vishay Semiconductor Diodes Division
PLZ2V4B-G3/H applications of zener single diodes.


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