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PLZ11B-G3/H

PLZ11B-G3/H

PLZ11B-G3/H

Vishay Semiconductor Diodes Division

ZENER DIODE 10Ohm ±3% 11V 200nA @ 8V 150°C 500mW 2 Terminations DO-219AC

SOT-23

PLZ11B-G3/H Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-219AC
Diode Element Material SILICON
Operating Temperature150°C
PackagingTape & Reel (TR)
Published 2017
Tolerance ±3%
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Max Power Dissipation500mW
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Reference Standard IEC-61000-4-2, 4-5
JESD-30 Code R-PDSO-F2
Number of Elements 1
Polarity UNIDIRECTIONAL
Configuration SINGLE
Impedance10Ohm
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 200nA @ 8V
Voltage - Forward (Vf) (Max) @ If 900mV @ 10mA
Impedance-Max 10Ohm
Reference Voltage11V
Voltage - Zener (Nom) (Vz) 11V
Zener Voltage 11V
Voltage Tol-Max 2.55%
Working Test Current 10mA
RoHS StatusROHS3 Compliant
In-Stock:25668 items

Pricing & Ordering

QuantityUnit PriceExt. Price

PLZ11B-G3/H Product Details

PLZ11B-G3/H Overview


An electrical device like this requires a reverse leakage current of 200nA @ 8V.A maximum voltage (Tol) can be supplied if 2.55% is set.While the device is operating, the maximum voltage - Zener (Nom) is reduced to 11V.This device must be operated with the working test voltage set to 10mA.For operation, diode reaches 900mV @ 10mA at the maximum voltage - Forward (Vf).

PLZ11B-G3/H Features


reverse leakage current of 200nA @ 8V
200nA @ 8V is the maximum voltage (Tol)
the working test voltage to 10mA
minimal dynamic impedance is 10mA


PLZ11B-G3/H Applications


There are a lot of Vishay Semiconductor Diodes Division
PLZ11B-G3/H applications of zener single diodes.


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