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MMSZ5260B-HE3-08

MMSZ5260B-HE3-08

MMSZ5260B-HE3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 93Ohm ±5% 43V 100nA @ 33V -55°C~150°C 500mW 2 Terminations SOD-123

SOT-23

MMSZ5260B-HE3-08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Weight 10.290877mg
Diode Element Material SILICON
Operating Temperature-55°C~150°C
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±5%
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Max Power Dissipation500mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count2
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance93Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 33V
Power Dissipation500mW
Max Reverse Leakage Current 100nA
Impedance-Max 93Ohm
Reference Voltage43V
Zener Voltage 43V
Voltage Tol-Max 5%
Working Test Current 3mA
Voltage Tolerance5%
RoHS StatusROHS3 Compliant
In-Stock:198575 items

Pricing & Ordering

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MMSZ5260B-HE3-08 Product Details

MMSZ5260B-HE3-08 Overview


An electrical device like this requires a reverse leakage current of 100nA @ 33V.A maximum voltage (Tol) can be supplied if 5% is set.During reverse leakage, the maximum current reaches 100nA.This device must be operated with the working test voltage set to 3mA.

MMSZ5260B-HE3-08 Features


reverse leakage current of 100nA @ 33V
100nA @ 33V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the working test voltage to 3mA
minimal dynamic impedance is 3mA


MMSZ5260B-HE3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
MMSZ5260B-HE3-08 applications of zener single diodes.


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