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MMBZ5256B-HE3-08

MMBZ5256B-HE3-08

MMBZ5256B-HE3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 49Ohm ±5% 30V 100nA @ 23V -55°C~150°C 225mW 3 Terminations TO-236-3, SC-59, SOT-23-3

SOT-23

MMBZ5256B-HE3-08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 8.788352mg
Diode Element Material SILICON
Operating Temperature-55°C~150°C
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±5%
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Max Power Dissipation225mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count3
JESD-30 Code R-PDSO-G3
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance49Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 23V
Power Dissipation225mW
Max Reverse Leakage Current 100nA
Impedance-Max 49Ohm
Reference Voltage30V
Zener Voltage 30V
Voltage Tol-Max 5%
Working Test Current 4.2mA
Voltage Tolerance5%
RoHS StatusROHS3 Compliant
In-Stock:4498 items

Pricing & Ordering

QuantityUnit PriceExt. Price

MMBZ5256B-HE3-08 Product Details

MMBZ5256B-HE3-08 Overview


The reverse leakage current for this electrical device is 100nA @ 23V.Voltage (Tol) 5% is the maximum possible.Reverse leakage currents can reach 100nA.This device should be operated with a 4.2mA working test voltage.

MMBZ5256B-HE3-08 Features


reverse leakage current of 100nA @ 23V
100nA @ 23V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the working test voltage to 4.2mA
minimal dynamic impedance is 4.2mA


MMBZ5256B-HE3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
MMBZ5256B-HE3-08 applications of zener single diodes.


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