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MBR30H100PT-E3/45

MBR30H100PT-E3/45

MBR30H100PT-E3/45

Vishay Semiconductor Diodes Division

MBR30H100PT-E3/45 datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website

SOT-23

MBR30H100PT-E3/45 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Diode Element Material SILICON
PackagingTube
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature175°C
Min Operating Temperature -65°C
Additional FeatureFREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT
HTS Code8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 40
Pin Count2
Number of Elements 2
Element ConfigurationCommon Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 5μA @ 100V
Voltage - Forward (Vf) (Max) @ If 820mV @ 15A
Forward Current15A
Max Reverse Leakage Current 500nA
Operating Temperature - Junction -65°C~175°C
Max Surge Current265A
Application EFFICIENCY
Forward Voltage930mV
Max Reverse Voltage (DC) 100V
Average Rectified Current15A
Number of Phases 1
Peak Reverse Current500nA
Max Repetitive Reverse Voltage (Vrrm) 100V
JEDEC-95 Code TO-247AD
Peak Non-Repetitive Surge Current 265A
Diode Configuration 1 Pair Common Cathode
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4562 items

Pricing & Ordering

QuantityUnit PriceExt. Price
750$1.83169$1373.7675

MBR30H100PT-E3/45 Product Details

MBR30H100PT-E3/45 Overview


In operation, this device will be set to 930mV volts forward.Array should be a rule to monArrayor the surge current and not allow Array to exceed 265A.In operation, this device will be set to 15A volts forward.In devices such as this one, reverse voltage peak is set at 500nA.The maximum reverse leakage current from a semiconductor device when reverse biased is 500nA.

MBR30H100PT-E3/45 Features


930mV forward voltage
a peak voltage of 500nA
a reverse voltage peak of 500nA

MBR30H100PT-E3/45 Applications


There are a lot of Vishay Semiconductor Diodes Division MBR30H100PT-E3/45 applications of rectifier diode array.

  • Rectifiers for UBS
  • Free wheeling diode in low voltage converters
  • Rectifiers in switch mode power supplies (SMPS)
  • Crowbar applications
  • Battery chargers
  • Rectifier for drives applications
  • General Rectification

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