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GDZ18B-HE3-08

GDZ18B-HE3-08

GDZ18B-HE3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 65Ohm ±4% 18V 100nA @ 13V -55°C~150°C 200mW 2 Terminations SC-76, SOD-323

SOT-23

GDZ18B-HE3-08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Weight 4.309128mg
Diode Element Material SILICON
Operating Temperature-55°C~150°C
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±4%
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Max Power Dissipation200mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance65Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 13V
Power Dissipation200mW
Max Reverse Leakage Current 100nA
Impedance-Max 65Ohm
Reference Voltage18V
Zener Voltage 18V
Voltage Tol-Max 2.2%
Working Test Current 5mA
RoHS StatusROHS3 Compliant
In-Stock:216610 items

Pricing & Ordering

QuantityUnit PriceExt. Price

GDZ18B-HE3-08 Product Details

GDZ18B-HE3-08 Overview


The reverse leakage current for this electrical device should be 100nA @ 13V.2.2% indicates the maximum possible voltage (Tol) of 2.2%.A maximum reverse leakage current of 100nA is observed.This device should be operated at 5mA on the working test voltage.

GDZ18B-HE3-08 Features


reverse leakage current of 100nA @ 13V
100nA @ 13V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


GDZ18B-HE3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
GDZ18B-HE3-08 applications of zener single diodes.


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