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GDZ11B-HE3-18

GDZ11B-HE3-18

GDZ11B-HE3-18

Vishay Semiconductor Diodes Division

ZENER DIODE 30Ohm ±4% 11V 100nA @ 8V -55°C~150°C 200mW 2 Terminations SC-76, SOD-323

SOT-23

GDZ11B-HE3-18 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Weight 4.309128mg
Diode Element Material SILICON
Operating Temperature-55°C~150°C
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±4%
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Max Power Dissipation200mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance30Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 8V
Power Dissipation200mW
Max Reverse Leakage Current 100nA
Impedance-Max 30Ohm
Reference Voltage11V
Zener Voltage 11V
Voltage Tol-Max 2.09%
Working Test Current 5mA
RoHS StatusROHS3 Compliant
In-Stock:211030 items

Pricing & Ordering

QuantityUnit PriceExt. Price

GDZ11B-HE3-18 Product Details

GDZ11B-HE3-18 Overview


The reverse leakage current for this electrical device is 100nA @ 8V.Voltage (Tol) 2.09% is the maximum possible.Reverse leakage currents can reach 100nA.This device should be operated with a 5mA working test voltage.

GDZ11B-HE3-18 Features


reverse leakage current of 100nA @ 8V
100nA @ 8V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


GDZ11B-HE3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
GDZ11B-HE3-18 applications of zener single diodes.


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