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GBU8M-M3/51

GBU8M-M3/51

GBU8M-M3/51

Vishay Semiconductor Diodes Division

GBU8M-M3/51 datasheet pdf and Diodes - Bridge Rectifiers product details from Vishay Semiconductor Diodes Division stock available on our website

SOT-23

GBU8M-M3/51 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-SIP, GBU
Number of Pins 4
Operating Temperature-55°C~150°C TJ
PackagingTray
Published 2015
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology Standard
Reach Compliance Code unknown
Diode Type Single Phase
Current - Reverse Leakage @ Vr 5μA @ 1000V
Voltage - Forward (Vf) (Max) @ If 1V @ 8A
Current - Average Rectified (Io) 8A
Peak Reverse Current5μA
Max Repetitive Reverse Voltage (Vrrm) 1kV
Max Forward Surge Current (Ifsm) 200A
RoHS StatusROHS3 Compliant
In-Stock:6979 items

Pricing & Ordering

QuantityUnit PriceExt. Price

GBU8M-M3/51 Product Details

GBU8M-M3/51 Overview


A 4-SIP, GBU package is a type of electronic component.Through Hole represents the mounting method.In order to ensure normal operation, the temperature must be set to -55°C~150°C TJ.There is a peak reverse voltage of 5μA which is used to power this device.

GBU8M-M3/51 Features


4-SIP, GBU package
operating at a temperature of -55°C~150°C TJ
peak reverse voltage of 5μA
a reverse voltage peak of 5μA

GBU8M-M3/51 Applications


There are a lot of Vishay Semiconductor Diodes Division GBU8M-M3/51 applications of bridge rectifiers.

  • SCR and diode based input rectifiers
  • Welding equipment
  • Fuse-in-glass diodes design
  • High forward surge current capability
  • Military, hybrid vehicles and power supplies
  • Electroplating systems – Input SCRs and output rectifiers
  • Low thermal resistance
  • Working peak reverse voltages 200 to 1 ,000 volts
  • Rectifier for induction heating
  • Aviation – Standby power distribution, resistive heating

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