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BZX84B30-G3-18

BZX84B30-G3-18

BZX84B30-G3-18

Vishay Semiconductor Diodes Division

ZENER DIODE 80Ohm ±2% 30V 50nA @ 21V -55°C~150°C 300mW 3 Terminations TO-236-3, SC-59, SOT-23-3

SOT-23

BZX84B30-G3-18 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 8.107964mg
Diode Element Material SILICON
Operating Temperature-55°C~150°C
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Max Power Dissipation300mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count3
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance80Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 50nA @ 21V
Power Dissipation300mW
Max Reverse Leakage Current 50nA
Impedance-Max 80Ohm
Reference Voltage30V
Zener Voltage 30V
Voltage Tol-Max 2%
Working Test Current 2mA
Voltage Tolerance2%
RoHS StatusROHS3 Compliant
In-Stock:159583 items

Pricing & Ordering

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BZX84B30-G3-18 Product Details

BZX84B30-G3-18 Overview


An electrical device such as this requires reverse leakage current of 50nA @ 21V.A voltage of 2% is considered to be the maximum that can be output (Tol).A maximum reverse leakage current is reached at 50nA.Setting the working test voltage to 2mA is required to operate this device.

BZX84B30-G3-18 Features


reverse leakage current of 50nA @ 21V
50nA @ 21V is the maximum voltage (Tol)
Reverse leakage current reaches 50nA
the working test voltage to 2mA
minimal dynamic impedance is 2mA


BZX84B30-G3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZX84B30-G3-18 applications of zener single diodes.


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