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BZX55B9V1-TAP

BZX55B9V1-TAP

BZX55B9V1-TAP

Vishay Semiconductor Diodes Division

10Ohm ±2% 9.1V 100nA @ 6.8V -65°C~175°C 500mW DO-204AH, DO-35, Axial

SOT-23

BZX55B9V1-TAP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Contact PlatingSilver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
Number of Pins 2
Operating Temperature-65°C~175°C
PackagingTape & Box (TB)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±2%
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation500mW
Pin Count2
Impedance10Ohm
Element ConfigurationSingle
Current - Reverse Leakage @ Vr 100nA @ 6.8V
Power Dissipation500mW
Voltage - Forward (Vf) (Max) @ If 1.5V @ 200mA
Max Reverse Leakage Current 100nA
Impedance-Max 10Ohm
Test Current 5mA
Zener Voltage 9.1V
Voltage Tolerance2%
ESD Protection No
RoHS StatusROHS3 Compliant
In-Stock:37104 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BZX55B9V1-TAP Product Details

BZX55B9V1-TAP Overview


The reverse leakage current needed to power this electric device is 100nA @ 6.8V.The reverse leakage current reaches zero at its maximum.For its operation, the maximum voltage - Forward (Vf) 1.5V @ 200mA is supplied.

BZX55B9V1-TAP Features


reverse leakage current of 100nA @ 6.8V
100nA @ 6.8V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA


BZX55B9V1-TAP Applications


There are a lot of Vishay Semiconductor Diodes Division
BZX55B9V1-TAP applications of zener single diodes.


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