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BZX55B30-TAP

BZX55B30-TAP

BZX55B30-TAP

Vishay Semiconductor Diodes Division

80Ohm ±2% 30V 100nA @ 22V -65°C~175°C 500mW DO-204AH, DO-35, Axial

SOT-23

BZX55B30-TAP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Contact PlatingSilver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
Number of Pins 2
Operating Temperature-65°C~175°C
PackagingTape & Box (TB)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±2%
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation500mW
Pin Count2
Impedance80Ohm
Element ConfigurationSingle
Current - Reverse Leakage @ Vr 100nA @ 22V
Power Dissipation500mW
Voltage - Forward (Vf) (Max) @ If 1.5V @ 200mA
Max Reverse Leakage Current 100nA
Impedance-Max 80Ohm
Test Current 5mA
Zener Voltage 30V
Voltage Tolerance2%
ESD Protection No
RoHS StatusROHS3 Compliant
In-Stock:32785 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.210000$0.21
10$0.198113$1.98113
100$0.186899$18.6899
500$0.176320$88.16
1000$0.166340$166.34

BZX55B30-TAP Product Details

BZX55B30-TAP Overview


A reverse leakage current of 100nA @ 22V is required to supply this electrical device.100nA is the maximum reverse leakage current.1.5V @ 200mA is reached when the maximum voltage - Forward (Vf) is supplied for its operation.

BZX55B30-TAP Features


reverse leakage current of 100nA @ 22V
100nA @ 22V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA


BZX55B30-TAP Applications


There are a lot of Vishay Semiconductor Diodes Division
BZX55B30-TAP applications of zener single diodes.


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