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BZX384C10-G3-08

BZX384C10-G3-08

BZX384C10-G3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 20Ohm ±5% 10V 200nA @ 7V -55°C~150°C 200mW 2 Terminations SC-76, SOD-323

SOT-23

BZX384C10-G3-08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Weight 3.997283mg
Diode Element Material SILICON
Operating Temperature-55°C~150°C
PackagingTape & Reel (TR)
Published 2016
Tolerance ±5%
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Max Power Dissipation200mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance20Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 200nA @ 7V
Power Dissipation200mW
Max Reverse Leakage Current 200nA
Impedance-Max 20Ohm
Reference Voltage10V
Zener Voltage 10V
Voltage Tol-Max 5%
Working Test Current 5mA
Voltage Tolerance5%
RoHS StatusROHS3 Compliant
In-Stock:155405 items

Pricing & Ordering

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BZX384C10-G3-08 Product Details

BZX384C10-G3-08 Overview


An electrical device such as this requires reverse leakage current of 200nA @ 7V.A voltage of 5% is considered to be the maximum that can be output (Tol).A maximum reverse leakage current is reached at 200nA.Setting the working test voltage to 5mA is required to operate this device.

BZX384C10-G3-08 Features


reverse leakage current of 200nA @ 7V
200nA @ 7V is the maximum voltage (Tol)
Reverse leakage current reaches 200nA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZX384C10-G3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZX384C10-G3-08 applications of zener single diodes.


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