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BZX384B62-HE3-08

BZX384B62-HE3-08

BZX384B62-HE3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 215Ohm ±2% 62V 50nA @ 43.4V -55°C~150°C 200mW 2 Terminations SC-76, SOD-323

SOT-23

BZX384B62-HE3-08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Weight 4.309128mg
Diode Element Material SILICON
Operating Temperature-55°C~150°C
PackagingTape & Reel (TR)
Published 2016
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Max Power Dissipation200mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count2
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance215Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 50nA @ 43.4V
Power Dissipation200mW
Max Reverse Leakage Current 50nA
Impedance-Max 215Ohm
Reference Voltage62V
Zener Voltage 62V
Voltage Tol-Max 2%
Working Test Current 2mA
Voltage Tolerance2%
RoHS StatusROHS3 Compliant
In-Stock:184531 items

Pricing & Ordering

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BZX384B62-HE3-08 Product Details

BZX384B62-HE3-08 Overview


The reverse leakage current for this electrical device should be 50nA @ 43.4V.2% indicates the maximum possible voltage (Tol) of 2%.A maximum reverse leakage current of 50nA is observed.This device should be operated at 2mA on the working test voltage.

BZX384B62-HE3-08 Features


reverse leakage current of 50nA @ 43.4V
50nA @ 43.4V is the maximum voltage (Tol)
Reverse leakage current reaches 50nA
the working test voltage to 2mA
minimal dynamic impedance is 2mA


BZX384B62-HE3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZX384B62-HE3-08 applications of zener single diodes.


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