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BZT55B51-GS08

BZT55B51-GS08

BZT55B51-GS08

Vishay Semiconductor Diodes Division

ZENER DIODE 125Ohm ±2% 51V 100nA @ 39V -65°C~175°C 500mW 2 Terminations SOD-80 Variant

SOT-23

BZT55B51-GS08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Contact PlatingSilver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-80 Variant
Diode Element Material SILICON
Operating Temperature-65°C~175°C
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±2%
JESD-609 Code e2
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN SILVER
HTS Code8541.10.00.50
Max Power Dissipation500mW
Terminal Position END
Terminal FormWRAP AROUND
Peak Reflow Temperature (Cel) 260
Pin Count2
JESD-30 Code O-LELF-R2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance125Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 39V
Power Dissipation500mW
Voltage - Forward (Vf) (Max) @ If 1.5V @ 200mA
Case Connection ISOLATED
Max Reverse Leakage Current 100nA
Impedance-Max 125Ohm
Test Current 2.5mA
Reference Voltage51V
Zener Voltage 51V
Voltage Tol-Max 2%
Voltage Tolerance2%
ESD Protection No
RoHS StatusROHS3 Compliant
In-Stock:201471 items

Pricing & Ordering

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BZT55B51-GS08 Product Details

BZT55B51-GS08 Overview


The reverse leakage current for this electrical device is 100nA @ 39V.Voltage (Tol) 2% is the maximum possible.Reverse leakage currents can reach 100nA.This value reaches 1.5V @ 200mA when the maximum Forward voltage (Vf) is applied.

BZT55B51-GS08 Features


reverse leakage current of 100nA @ 39V
100nA @ 39V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA


BZT55B51-GS08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT55B51-GS08 applications of zener single diodes.


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