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BZT55B4V7-GS08

BZT55B4V7-GS08

BZT55B4V7-GS08

Vishay Semiconductor Diodes Division

ZENER DIODE 80Ohm ±2% 4.7V 500nA @ 1V -65°C~175°C 500mW 2 Terminations SOD-80 Variant

SOT-23

BZT55B4V7-GS08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Contact PlatingSilver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-80 Variant
Number of Pins 2
Diode Element Material SILICON
Operating Temperature-65°C~175°C
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±2%
JESD-609 Code e2
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN SILVER
HTS Code8541.10.00.50
Max Power Dissipation500mW
Terminal Position END
Terminal FormWRAP AROUND
Peak Reflow Temperature (Cel) 260
Pin Count2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance80Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 500nA @ 1V
Power Dissipation500mW
Voltage - Forward (Vf) (Max) @ If 1.5V @ 200mA
Case Connection ISOLATED
Max Reverse Leakage Current 500nA
Impedance-Max 80Ohm
Test Current 5mA
Reference Voltage4.7V
Zener Voltage 4.7V
Voltage Tol-Max 2%
Voltage Tolerance2%
ESD Protection No
RoHS StatusROHS3 Compliant
In-Stock:195169 items

Pricing & Ordering

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BZT55B4V7-GS08 Product Details

BZT55B4V7-GS08 Overview


In order to supply this electrical device, a reverse leakage current of 500nA @ 1V is required.This value (Tol) represents the maximum voltage that can be supplied.A reverse leakage current that reaches 500nA is the maximum.1.5V @ 200mA is achieved when the maximum voltage - Forward (Vf) is applied for its operation.

BZT55B4V7-GS08 Features


reverse leakage current of 500nA @ 1V
500nA @ 1V is the maximum voltage (Tol)
Reverse leakage current reaches 500nA


BZT55B4V7-GS08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT55B4V7-GS08 applications of zener single diodes.


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